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  6. TR 288: Elastic Tuning and Response of Electronic Quantum Phases of Matter of Electronic Q
  7. TR 288 - Elasto-Q-Mat: Research Data
  8. Moment canting and domain effects in antiferromagnetic DyRh2Si2
 
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Title(s)
TitleLanguage
Moment canting and domain effects in antiferromagnetic DyRh2Si2
en
 
Author(s)
NameORCIDGNDAffiliation
Kliemt, Kristin 
0000-0001-7415-4158
Physics 
 
Project(s)
TRR 288: Elastic Tuning and Response of Electronic Quantum Phases of Matter 
 
Faculty
13 Physics
 
DFG-Subject
307-01 Experimental Condensed Matter Physics
 
Date Issued
25 October 2023
 
Publisher(s)
Goethe-Universität Frankfurt
 
Handle
https://gude.uni-frankfurt.de/handle/gude/307
 
DOI
10.25716/gude.0h0w-nw55
 

Type(s) of data
Dataset
 
Language(s)
en
 
Abstract(s)
AbstractLanguage
A combined experimental and theoretical study of the layered antiferromagnetic compound DyRh2Si2 in the
ThCr2Si2-type structure is presented. The heat capacity shows two transitions upon cooling: The first one at the
Néel temperature TN = 55 K and a second one at TN2 = 12 K. Using magnetization measurements, we study the
canting process of the Dy moments upon changing the temperature and can assign TN2 to the onset of the canting
of the magnetic moments towards the [100] direction away from the c axis. Furthermore, we found that the field
dependence of the magnetization is highly anisotropic and shows a two-step process for H || 001. We used a
mean-field model to determine the crystalline electric field as well as the exchange interaction parameters. Our
magnetization data together with the calculations reveal a moment orientation close to the [101] direction in the
tetragonal structure at low temperatures and fields. Applying photoemission electron microscopy, we explore the
(001) surface of the cleaved DyRh2Si2 single crystal and visualize Si- and Dy-terminated surfaces. Our results
indicate that the Si-Rh-Si surface protects the deeper lying magnetically active Dy layers and is thus attractive
for investigation of magnetic domains and their properties in the large family of LnT2Si2 materials.
en
 

License
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) cclicense-logocclicense-logocclicense-logocclicense-logo
 

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